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Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application....

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Detalles Bibliográficos
Autores principales: Park, Youngjun, Kim, Seong Hun, Lee, Donghwa, Lee, Jang-Sik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8192534/
https://www.ncbi.nlm.nih.gov/pubmed/34112776
http://dx.doi.org/10.1038/s41467-021-23871-w