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Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application....
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8192534/ https://www.ncbi.nlm.nih.gov/pubmed/34112776 http://dx.doi.org/10.1038/s41467-021-23871-w |