Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

Detalles Bibliográficos
Autores principales: Dai, Mingzhi, Wang, Weiliang, Wang, Pengjun, Iqbal, Muhammad Zahir, Annabi, Nasim, Amin, Nasir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Author Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8192936/
https://www.ncbi.nlm.nih.gov/pubmed/34112834
http://dx.doi.org/10.1038/s41598-021-91377-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8192936/
https://www.ncbi.nlm.nih.gov/pubmed/34112834
http://dx.doi.org/10.1038/s41598-021-91377-y

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