Ion-Enhanced Etching Characteristics of sp(2)-Rich Hydrogenated Amorphous Carbons in CF(4) Plasmas and O(2) Plasmas

The sp(2)-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp(2)-rich a-C:H films on ion density and ion energy were investigated in CF(4) plasmas and O(2) plasmas in this work. The etch...

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Detalles Bibliográficos
Autores principales: Li, Jie, Kim, Yongjae, Han, Seunghun, Chae, Heeyeop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8198839/
https://www.ncbi.nlm.nih.gov/pubmed/34072492
http://dx.doi.org/10.3390/ma14112941

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8198839/
https://www.ncbi.nlm.nih.gov/pubmed/34072492
http://dx.doi.org/10.3390/ma14112941

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