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Ion-Enhanced Etching Characteristics of sp(2)-Rich Hydrogenated Amorphous Carbons in CF(4) Plasmas and O(2) Plasmas
The sp(2)-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp(2)-rich a-C:H films on ion density and ion energy were investigated in CF(4) plasmas and O(2) plasmas in this work. The etch...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8198839/ https://www.ncbi.nlm.nih.gov/pubmed/34072492 http://dx.doi.org/10.3390/ma14112941 |