Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF(6)/O(2)/Ar Capacitively Coupled Plasma

In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) technology, one of the measurement and inspection (M...

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Detalles Bibliográficos
Autores principales: Kwon, Ji-Won, Ryu, Sangwon, Park, Jihoon, Lee, Haneul, Jang, Yunchang, Park, Seolhye, Kim, Gon-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8199536/
https://www.ncbi.nlm.nih.gov/pubmed/34206084
http://dx.doi.org/10.3390/ma14113005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8199536/
https://www.ncbi.nlm.nih.gov/pubmed/34206084
http://dx.doi.org/10.3390/ma14113005

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