Silicon Oxide Etching Process of NF(3) and F(3)NO Plasmas with a Residual Gas Analyzer

The use of NF(3) is significantly increasing every year. However, NF(3) is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF(3) is required. F(3)NO is considered a potential replacement to NF(3). In this study, the characteristics and...

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Detalles Bibliográficos
Autores principales: Kim, Woo-Jae, Bang, In-Young, Kim, Ji-Hwan, Park, Yeon-Soo, Kwon, Hee-Tae, Shin, Gi-Won, Kang, Min-Ho, Cho, Youngjun, Kwon, Byung-Hyang, Kwak, Jung-Hun, Kwon, Gi-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8199652/
https://www.ncbi.nlm.nih.gov/pubmed/34199585
http://dx.doi.org/10.3390/ma14113026

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8199652/
https://www.ncbi.nlm.nih.gov/pubmed/34199585
http://dx.doi.org/10.3390/ma14113026

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