Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

The effect of vacancy defects on the structure and mechanical properties of semiconductor silicon materials is of great significance to the development of novel microelectronic materials and the processes of semiconductor sensors. In this paper, molecular dynamics is used to simulate the atomic pack...

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Detalles Bibliográficos
Autores principales: Dai, Feng, Zhao, Dandan, Zhang, Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8201129/
https://www.ncbi.nlm.nih.gov/pubmed/34200276
http://dx.doi.org/10.3390/ma14113127

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8201129/
https://www.ncbi.nlm.nih.gov/pubmed/34200276
http://dx.doi.org/10.3390/ma14113127

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