Cargando…
Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating
The effect of vacancy defects on the structure and mechanical properties of semiconductor silicon materials is of great significance to the development of novel microelectronic materials and the processes of semiconductor sensors. In this paper, molecular dynamics is used to simulate the atomic pack...
Autores principales: | Dai, Feng, Zhao, Dandan, Zhang, Lin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8201129/ https://www.ncbi.nlm.nih.gov/pubmed/34200276 http://dx.doi.org/10.3390/ma14113127 |
Ejemplares similares
-
Lattice Strain Due to an Atomic Vacancy
por: Li, Shidong, et al.
Publicado: (2009) -
Direct Imaging of Atomic Permeation Through a Vacancy Defect in the Carbon Lattice
por: Cao, Kecheng, et al.
Publicado: (2020) -
Probing Single Vacancies in Black Phosphorus at the
Atomic Level
por: Kiraly, Brian, et al.
Publicado: (2017) -
Vacancy assisted diffusion on single‐atom surface alloys
por: Mahlberg, David, et al.
Publicado: (2020) -
Sphere packings, lattices and groups
por: Conway, J H, et al.
Publicado: (1999)