Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO(2) and its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-volatil...

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Detalles Bibliográficos
Autores principales: Wang, Zheng, Hur, Jae, Tasneem, Nujhat, Chern, Winston, Yu, Shimeng, Khan, Asif
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8203701/
https://www.ncbi.nlm.nih.gov/pubmed/34127695
http://dx.doi.org/10.1038/s41598-021-91492-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8203701/
https://www.ncbi.nlm.nih.gov/pubmed/34127695
http://dx.doi.org/10.1038/s41598-021-91492-w

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