Observation of current-induced switching in non-collinear antiferromagnetic IrMn(3) by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densit...

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Detalles Bibliográficos
Autores principales: Arpaci, Sevdenur, Lopez-Dominguez, Victor, Shi, Jiacheng, Sánchez-Tejerina, Luis, Garesci, Francesca, Wang, Chulin, Yan, Xueting, Sangwan, Vinod K., Grayson, Matthew A., Hersam, Mark C., Finocchio, Giovanni, Khalili Amiri, Pedram
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8219769/
https://www.ncbi.nlm.nih.gov/pubmed/34158511
http://dx.doi.org/10.1038/s41467-021-24237-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8219769/
https://www.ncbi.nlm.nih.gov/pubmed/34158511
http://dx.doi.org/10.1038/s41467-021-24237-y

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