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Observation of current-induced switching in non-collinear antiferromagnetic IrMn(3) by differential voltage measurements
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densit...
Autores principales: | Arpaci, Sevdenur, Lopez-Dominguez, Victor, Shi, Jiacheng, Sánchez-Tejerina, Luis, Garesci, Francesca, Wang, Chulin, Yan, Xueting, Sangwan, Vinod K., Grayson, Matthew A., Hersam, Mark C., Finocchio, Giovanni, Khalili Amiri, Pedram |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8219769/ https://www.ncbi.nlm.nih.gov/pubmed/34158511 http://dx.doi.org/10.1038/s41467-021-24237-y |
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