Large-Area, Two-Dimensional MoS(2) Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface

[Image: see text] Two-dimensional semiconductors such as MoS(2) are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To...

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Detalles Bibliográficos
Autores principales: Pollmann, Erik, Sleziona, Stephan, Foller, Tobias, Hagemann, Ulrich, Gorynski, Claudia, Petri, Oliver, Madauß, Lukas, Breuer, Lars, Schleberger, Marika
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8223410/
https://www.ncbi.nlm.nih.gov/pubmed/34179637
http://dx.doi.org/10.1021/acsomega.1c01570

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8223410/
https://www.ncbi.nlm.nih.gov/pubmed/34179637
http://dx.doi.org/10.1021/acsomega.1c01570

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