Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS(2) Channel and Its Application to Infrared Detectable Phototransistors

For next‐generation electronics and optoelectronics, 2D‐layered nanomaterial‐based field effect transistors (FETs) have garnered attention as promising candidates owing to their remarkable properties. However, their subthreshold swings (SS) cannot be lower than 60 mV/decade owing to the limitation o...

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Detalles Bibliográficos
Autores principales: Kim, Seung‐Geun, Kim, Seung‐Hwan, Kim, Gwang‐Sik, Jeon, Hyeok, Kim, Taehyun, Yu, Hyun‐Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224431/
https://www.ncbi.nlm.nih.gov/pubmed/34194944
http://dx.doi.org/10.1002/advs.202100208

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224431/
https://www.ncbi.nlm.nih.gov/pubmed/34194944
http://dx.doi.org/10.1002/advs.202100208

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