Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbo...

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Detalles Bibliográficos
Autores principales: Kikuchi, Hisaki, Takahashi, Katsuyuki, Mukaigawa, Seiji, Takaki, Koichi, Yukimura, Ken
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224634/
https://www.ncbi.nlm.nih.gov/pubmed/34067412
http://dx.doi.org/10.3390/mi12060599

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224634/
https://www.ncbi.nlm.nih.gov/pubmed/34067412
http://dx.doi.org/10.3390/mi12060599

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