Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and...

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Detalles Bibliográficos
Autores principales: Medina-Bailon, Cristina, Padilla, José Luis, Sampedro, Carlos, Donetti, Luca, Gergiev, Vihar P., Gamiz, Francisco, Asenov, Asen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224779/
https://www.ncbi.nlm.nih.gov/pubmed/34067459
http://dx.doi.org/10.3390/mi12060601

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224779/
https://www.ncbi.nlm.nih.gov/pubmed/34067459
http://dx.doi.org/10.3390/mi12060601

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