Improved Device Distribution in High-Performance SiN(x) Resistive Random Access Memory via Arsenic Ion Implantation

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiN(x) RRAM device is realized via arsenic ion (As(+)) implantation. Besides, the As(+)-implanted SiN(x) RRAM device exhib...

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Detalles Bibliográficos
Autores principales: Yen, Te-Jui, Chin, Albert, Gritsenko, Vladimir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8226572/
https://www.ncbi.nlm.nih.gov/pubmed/34070624
http://dx.doi.org/10.3390/nano11061401

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8226572/
https://www.ncbi.nlm.nih.gov/pubmed/34070624
http://dx.doi.org/10.3390/nano11061401

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