Cargando…
Improved Device Distribution in High-Performance SiN(x) Resistive Random Access Memory via Arsenic Ion Implantation
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiN(x) RRAM device is realized via arsenic ion (As(+)) implantation. Besides, the As(+)-implanted SiN(x) RRAM device exhib...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8226572/ https://www.ncbi.nlm.nih.gov/pubmed/34070624 http://dx.doi.org/10.3390/nano11061401 |