Investigation on Ge(0.8)Si(0.2)-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge(0.8)Si(0.2) was considered. In this work, a dual-selective atomic layer etching (ALE), including Ge(0.8)Si(0.2)-selective etching of Ge a...

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Detalles Bibliográficos
Autores principales: Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Li, Junjie, Wang, Guilei, Du, Anyan, Kong, Zhenzhen, Wang, Qi, Lu, Shunshun, Li, Chen, Li, Yangyang, Huang, Weixing, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8226618/
https://www.ncbi.nlm.nih.gov/pubmed/34073548
http://dx.doi.org/10.3390/nano11061408

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8226618/
https://www.ncbi.nlm.nih.gov/pubmed/34073548
http://dx.doi.org/10.3390/nano11061408

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