Analysis of Leakage Current of HfO(2)/TaO(x)-Based 3-D Vertical Resistive Random Access Memory Array

Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D...

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Detalles Bibliográficos
Autores principales: Chen, Zhisheng, Song, Renjun, Huo, Qiang, Ren, Qirui, Zhang, Chenrui, Li, Linan, Zhang, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8227016/
https://www.ncbi.nlm.nih.gov/pubmed/34073505
http://dx.doi.org/10.3390/mi12060614

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8227016/
https://www.ncbi.nlm.nih.gov/pubmed/34073505
http://dx.doi.org/10.3390/mi12060614

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