Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes

An efficiency droop in GaN-based light-emitting diodes (LED) was characterized by examining its general thermophysical parameters. An effective suppression of emission degradation afforded by the introduction of InGaN/GaN heterobarrier structures in the active region was attributable to an increase...

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Detalles Bibliográficos
Autores principales: Nee, Tzer-En, Wang, Jen-Cheng, Zhong, Bo-Yan, Hsiao, Jui-Ju, Wu, Ya-Fen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8227426/
https://www.ncbi.nlm.nih.gov/pubmed/34070771
http://dx.doi.org/10.3390/nano11061449

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8227426/
https://www.ncbi.nlm.nih.gov/pubmed/34070771
http://dx.doi.org/10.3390/nano11061449

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