Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer

Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform an...

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Detalles Bibliográficos
Autores principales: Susanto, Iwan, Tsai, Chi-Yu, Ho, Yen-Teng, Tsai, Ping-Yu, Yu, Ing-Song
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/
https://www.ncbi.nlm.nih.gov/pubmed/34073367
http://dx.doi.org/10.3390/nano11061406

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/
https://www.ncbi.nlm.nih.gov/pubmed/34073367
http://dx.doi.org/10.3390/nano11061406

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