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Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform an...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/ https://www.ncbi.nlm.nih.gov/pubmed/34073367 http://dx.doi.org/10.3390/nano11061406 |
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author | Susanto, Iwan Tsai, Chi-Yu Ho, Yen-Teng Tsai, Ping-Yu Yu, Ing-Song |
author_facet | Susanto, Iwan Tsai, Chi-Yu Ho, Yen-Teng Tsai, Ping-Yu Yu, Ing-Song |
author_sort | Susanto, Iwan |
collection | PubMed |
description | Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS(2) at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS(2) heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS(2) can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C. |
format | Online Article Text |
id | pubmed-8228796 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-82287962021-06-26 Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer Susanto, Iwan Tsai, Chi-Yu Ho, Yen-Teng Tsai, Ping-Yu Yu, Ing-Song Nanomaterials (Basel) Article Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS(2) at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS(2) heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS(2) can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C. MDPI 2021-05-26 /pmc/articles/PMC8228796/ /pubmed/34073367 http://dx.doi.org/10.3390/nano11061406 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Susanto, Iwan Tsai, Chi-Yu Ho, Yen-Teng Tsai, Ping-Yu Yu, Ing-Song Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer |
title | Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer |
title_full | Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer |
title_fullStr | Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer |
title_full_unstemmed | Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer |
title_short | Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer |
title_sort | temperature effect of van der waals epitaxial gan films on pulse-laser-deposited 2d mos(2) layer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/ https://www.ncbi.nlm.nih.gov/pubmed/34073367 http://dx.doi.org/10.3390/nano11061406 |
work_keys_str_mv | AT susantoiwan temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer AT tsaichiyu temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer AT hoyenteng temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer AT tsaipingyu temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer AT yuingsong temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer |