Cargando…

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer

Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform an...

Descripción completa

Detalles Bibliográficos
Autores principales: Susanto, Iwan, Tsai, Chi-Yu, Ho, Yen-Teng, Tsai, Ping-Yu, Yu, Ing-Song
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/
https://www.ncbi.nlm.nih.gov/pubmed/34073367
http://dx.doi.org/10.3390/nano11061406
_version_ 1783712826521550848
author Susanto, Iwan
Tsai, Chi-Yu
Ho, Yen-Teng
Tsai, Ping-Yu
Yu, Ing-Song
author_facet Susanto, Iwan
Tsai, Chi-Yu
Ho, Yen-Teng
Tsai, Ping-Yu
Yu, Ing-Song
author_sort Susanto, Iwan
collection PubMed
description Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS(2) at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS(2) heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS(2) can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C.
format Online
Article
Text
id pubmed-8228796
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-82287962021-06-26 Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer Susanto, Iwan Tsai, Chi-Yu Ho, Yen-Teng Tsai, Ping-Yu Yu, Ing-Song Nanomaterials (Basel) Article Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS(2) at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS(2) heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS(2) can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C. MDPI 2021-05-26 /pmc/articles/PMC8228796/ /pubmed/34073367 http://dx.doi.org/10.3390/nano11061406 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Susanto, Iwan
Tsai, Chi-Yu
Ho, Yen-Teng
Tsai, Ping-Yu
Yu, Ing-Song
Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
title Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
title_full Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
title_fullStr Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
title_full_unstemmed Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
title_short Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
title_sort temperature effect of van der waals epitaxial gan films on pulse-laser-deposited 2d mos(2) layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/
https://www.ncbi.nlm.nih.gov/pubmed/34073367
http://dx.doi.org/10.3390/nano11061406
work_keys_str_mv AT susantoiwan temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer
AT tsaichiyu temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer
AT hoyenteng temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer
AT tsaipingyu temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer
AT yuingsong temperatureeffectofvanderwaalsepitaxialganfilmsonpulselaserdeposited2dmos2layer