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Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp(2)-bonded two-dimensional (2D) MoS(2) buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform an...
Autores principales: | Susanto, Iwan, Tsai, Chi-Yu, Ho, Yen-Teng, Tsai, Ping-Yu, Yu, Ing-Song |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228796/ https://www.ncbi.nlm.nih.gov/pubmed/34073367 http://dx.doi.org/10.3390/nano11061406 |
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