Cargando…

The Effect of Nitrogen Incorporation on the Optical Properties of Si-Rich a-SiCx Films Deposited by VHF PECVD

The influence of N incorporation on the optical properties of Si-rich a-SiC(x) films deposited by very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) was investigated. The increase in N content in the films was found to cause a remarkable enhancement in photoluminescence (PL)....

Descripción completa

Detalles Bibliográficos
Autores principales:	Li, Hongliang, Lin, Zewen, Guo, Yanqing, Song, Jie, Huang, Rui, Lin, Zhenxu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228809/ https://www.ncbi.nlm.nih.gov/pubmed/34070734 http://dx.doi.org/10.3390/mi12060637

Ejemplares similares

A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD
por: Wang, Yuwei, et al.
Publicado: (2018)

High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature
por: Park, Kyoung Woo, et al.
Publicado: (2018)

Effect of Nitrogen Doping on the Photoluminescence of Amorphous Silicon Oxycarbide Films
por: Song, Jie, et al.
Publicado: (2019)

Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications
por: Garcia-Barrientos, Abel, et al.
Publicado: (2021)

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
por: Kim, Ki Seok, et al.
Publicado: (2017)

Prediction of Surface Roughness as a Function of Temperature for SiO(2) Thin-Film in PECVD Process
por: Amirzada, Muhammad Rizwan, et al.
Publicado: (2022)

Ordered Arrays of SiGe Islands from Low-Energy PECVD
por: Bollani, M, et al.
Publicado: (2010)

Simulation of deposition processes with PECVD apparatus
por: Geiser, Juergen, et al.
Publicado: (2012)

Effect of a-SiC(x)N(y):H Encapsulation on the Stability and Photoluminescence Property of CsPbBr(3) Quantum Dots
por: Lin, Zewen, et al.
Publicado: (2023)

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
por: Ben Slama, Sonia, et al.
Publicado: (2012)

Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films
por: Liu, Qianqian, et al.
Publicado: (2021)

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF(4) Based Process Conditions
por: Moreno, Mario, et al.
Publicado: (2021)

Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO(2) Gate Insulator
por: Cho, Geunho, et al.
Publicado: (2019)

VHF and UHF antennas
por: Burberry, RA
Publicado: (1991)

Characterization of ultrathin InSb nanocrystals film deposited on SiO(2)/Si substrate
por: Li, Dengyue, et al.
Publicado: (2011)

Compositional and optical properties of SiO( x ) films and (SiO( x )/SiO( y )) junctions deposited by HFCVD
por: Vázquez-Valerdi, Diana E, et al.
Publicado: (2014)

Measurement of Electrical Properties of Superconducting YBCO Thin Films in the VHF Range
por: Dahan, Yakir, et al.
Publicado: (2021)

Superhydrophobic and Electrochemical Performance of CF(2)-Modified g-C(3)N(4)/Graphene Composite Film Deposited by PECVD
por: Li, Dayu, et al.
Publicado: (2022)

Low-energy Ar(+) and N(+) ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
por: Yoshimura, Satoru, et al.
Publicado: (2021)

Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films
por: Œmietana, Mateusz, et al.
Publicado: (2014)

On the Mixed Gas Behavior of Organosilica Membranes Fabricated by Plasma-Enhanced Chemical Vapor Deposition (PECVD)
por: Rubner, Jens, et al.
Publicado: (2022)

On the origin of emission and thermal quenching of SRSO:Er(3+) films grown by ECR-PECVD
por: Podhorodecki, Artur, et al.
Publicado: (2013)

Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
por: Chen, Guangxu, et al.
Publicado: (2022)

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition
por: Wu, Sudong, et al.
Publicado: (2014)

Study of Atomic Layer Deposition Nano-Oxide Films on Corrosion Protection of Al-SiC Composites
por: Chen, Hou-Jen, et al.
Publicado: (2023)

Sistemas de comunicación VHF-FM /
por: Santes García, Guillermo
Publicado: (2002)

Structural and optical characterization of pure Si-rich nitride thin films
por: Debieu, Olivier, et al.
Publicado: (2013)

Homogeneous crystalline FeSi(2) films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy
por: Zou, Zhi-Qiang, et al.
Publicado: (2013)

Chemical vapor deposition merges MoS(2) grains into high-quality and centimeter-scale films on Si/SiO(2)
por: Singh, Mukesh, et al.
Publicado: (2022)

Allylamine PECVD Modification of PDMS as Simple Method to Obtain Conductive Flexible Polypyrrole Thin Films
por: Texidó, Robert, et al.
Publicado: (2019)

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric
por: Gao, Xiaohui, et al.
Publicado: (2022)

A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy
por: Ferro, Gabriel, et al.
Publicado: (2017)

"Transmisor harris VHF de 10kw" /
por: Contreras Galván, Yovan
Publicado: (2003)

Searching for intra-cloud positive leaders in VHF
por: Scholten, O., et al.
Publicado: (2023)

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases
por: Horňák, Peter, et al.
Publicado: (2020)

Rich essential properties of Si-doped graphene
por: Nguyen, Duy Khanh, et al.
Publicado: (2020)

Characterising a Custom-Built Radio Frequency PECVD Reactor to Vary the Mechanical Properties of TMDSO Films
por: Radjef, Racim, et al.
Publicado: (2021)

Systematic Study of the SiO(x) Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiO(x)/SiO(2) Super-Lattice
por: Ma, Hong-Ping, et al.
Publicado: (2019)

Optical and Structural Properties of Si Nanocrystals in SiO(2) Films
por: Nikitin, Timur, et al.
Publicado: (2015)

Development of a high-power VHF klystron for JHF
por: Fukuda, S, et al.
Publicado: (1998)

Cannot write session to /tmp/vufind_sessions/sess_o8u1emudst2uenothn18i1dec9