Strain Modulation of Selectively and/or Globally Grown Ge Layers

This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. T...

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Detalles Bibliográficos
Autores principales: Du, Yong, Wang, Guilei, Miao, Yuanhao, Xu, Buqing, Li, Ben, Kong, Zhenzhen, Yu, Jiahan, Zhao, Xuewei, Lin, Hongxiao, Su, Jiale, Han, Jianghao, Liu, Jinbiao, Dong, Yan, Wang, Wenwu, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8229019/
https://www.ncbi.nlm.nih.gov/pubmed/34071167
http://dx.doi.org/10.3390/nano11061421

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8229019/
https://www.ncbi.nlm.nih.gov/pubmed/34071167
http://dx.doi.org/10.3390/nano11061421

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