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Capacitive Measurements of SiO(2) Films of Different Thicknesses Using a MOSFET-Based SPM Probe
We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. The signal varied depending on the thickness of the silicon dioxide film covering...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8231994/ https://www.ncbi.nlm.nih.gov/pubmed/34199213 http://dx.doi.org/10.3390/s21124073 |