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Capacitive Measurements of SiO(2) Films of Different Thicknesses Using a MOSFET-Based SPM Probe

We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. The signal varied depending on the thickness of the silicon dioxide film covering...

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Detalles Bibliográficos
Autores principales:	Lee, Hoontaek, Shin, Kumjae, Moon, Wonkyu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8231994/ https://www.ncbi.nlm.nih.gov/pubmed/34199213 http://dx.doi.org/10.3390/s21124073

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