Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) u...

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Detalles Bibliográficos
Autores principales: Zhang, Zhenzhong, Wang, Fang, Hu, Kai, She, Yu, Song, Sannian, Song, Zhitang, Zhang, Kailiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8233777/
https://www.ncbi.nlm.nih.gov/pubmed/34208616
http://dx.doi.org/10.3390/ma14123330

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8233777/
https://www.ncbi.nlm.nih.gov/pubmed/34208616
http://dx.doi.org/10.3390/ma14123330

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