Cargando…

Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) u...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhang, Zhenzhong, Wang, Fang, Hu, Kai, She, Yu, Song, Sannian, Song, Zhitang, Zhang, Kailiang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8233777/ https://www.ncbi.nlm.nih.gov/pubmed/34208616 http://dx.doi.org/10.3390/ma14123330

Ejemplares similares

Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
por: Kim, Jin Mo, et al.
Publicado: (2021)

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications
por: He, Zhen-Yu, et al.
Publicado: (2019)

Geometric conductive filament confinement by nanotips for resistive switching of HfO(2)-RRAM devices with high performance
por: Niu, Gang, et al.
Publicado: (2016)

HFOX: a fibre-optic extender for the high-performance parallel interface, HiPPL
por: Haben, M, et al.
Publicado: (1993)

Ta-Doped Sb(2)Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics
por: Xue, Yuan, et al.
Publicado: (2021)

Impacts of Cu-Doping on the Performance of La-Based RRAM Devices
por: Wang, Yongte, et al.
Publicado: (2019)

Advantages of Ta-Doped Sb(3)Te(1) Materials for Phase Change Memory Applications
por: Shao, Mingyue, et al.
Publicado: (2023)

Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
por: Wu, Lei, et al.
Publicado: (2020)

Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment
por: Yuan, Fang-Yuan, et al.
Publicado: (2017)

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
por: Chen, Kai-Huang, et al.
Publicado: (2017)

Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics
por: Lin, Yu-De, et al.
Publicado: (2017)

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb(2)Te(3)
por: Zhang, Jie, et al.
Publicado: (2023)

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device
por: Zhang, Meiyun, et al.
Publicado: (2016)

Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
por: Zhang, Wei, et al.
Publicado: (2017)

Improved resistive switching characteristics of a multi-stacked HfO(2)/Al(2)O(3)/HfO(2) RRAM structure for neuromorphic and synaptic applications: experimental and computational study
por: Khera, Ejaz Ahmad, et al.
Publicado: (2022)

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO(2)-Based RRAM
por: Long, Shibing, et al.
Publicado: (2013)

Pt Modified Sb(2)Te(3) Alloy Ensuring High−Performance Phase Change Memory
por: Qiao, Yang, et al.
Publicado: (2022)

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
por: Bature, Usman Isyaku, et al.
Publicado: (2022)

Atomic scale insight into the effects of Aluminum doped Sb(2)Te for phase change memory application
por: Wang, Yong, et al.
Publicado: (2018)

The role of arsenic in the operation of sulfur-based electrical threshold switches
por: Wu, Renjie, et al.
Publicado: (2023)

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO(2)-Based RRAM and Applications for Pattern Recognition
por: Zhou, Zheng, et al.
Publicado: (2017)

Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
por: Kim, Doohyung, et al.
Publicado: (2022)

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
por: Shen, Zongjie, et al.
Publicado: (2020)

Effect of Hydrogen Annealing on Performances of BN-Based RRAM
por: Lee, Doowon, et al.
Publicado: (2023)

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
por: Chen, Kai-Huang, et al.
Publicado: (2017)

A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation
por: Chen, Zhizhi, et al.
Publicado: (2023)

Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System
por: Oh, Inho, et al.
Publicado: (2022)

Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer
por: Song, Sannian, et al.
Publicado: (2013)

Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
por: Zhang, Jiarui, et al.
Publicado: (2023)

Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO(2)/TaOx/TaN Devices
por: Park, Minsu, et al.
Publicado: (2022)

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO(2) RRAM devices
por: Grossi, Alessandro, et al.
Publicado: (2018)

Bipolar Switching Characteristics of Transparent WO(X)-Based RRAM for Synaptic Application and Neuromorphic Engineering
por: Kim, Jihyung, et al.
Publicado: (2022)

Enhanced ferroelectric switching speed of Si-doped HfO(2) thin film tailored by oxygen deficiency
por: Lee, Kyoungjun, et al.
Publicado: (2021)

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
por: Zahoor, Furqan, et al.
Publicado: (2020)

Nitrogen–sulfur dual-doped porous carbon spheres/sulfur composites for high-performance lithium–sulfur batteries
por: Zhao, Liping, et al.
Publicado: (2019)

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
por: Yuan, Fang, et al.
Publicado: (2014)

An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement
por: Ni, Shenglan, et al.
Publicado: (2022)

Novel Vertical 3D Structure of TaO(x)-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation
por: Yu, Muxi, et al.
Publicado: (2016)

Graphene-based RRAM devices for neural computing
por: R, Rajalekshmi T., et al.
Publicado: (2023)

Ulothrix-Derived Sulfur-Doped Porous Carbon for High-Performance Symmetric Supercapacitors
por: Liu, Song, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_g7db7laamvqfua70s2tp0o0kpl