High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled v...

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Detalles Bibliográficos
Autores principales: Fiorenza, Patrick, Alessandrino, Mario S., Carbone, Beatrice, Russo, Alfio, Roccaforte, Fabrizio, Giannazzo, Filippo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234276/
https://www.ncbi.nlm.nih.gov/pubmed/34205790
http://dx.doi.org/10.3390/nano11061626

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234276/
https://www.ncbi.nlm.nih.gov/pubmed/34205790
http://dx.doi.org/10.3390/nano11061626

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