High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled v...

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Detalles Bibliográficos
Autores principales: Fiorenza, Patrick, Alessandrino, Mario S., Carbone, Beatrice, Russo, Alfio, Roccaforte, Fabrizio, Giannazzo, Filippo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234276/
https://www.ncbi.nlm.nih.gov/pubmed/34205790
http://dx.doi.org/10.3390/nano11061626
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author Fiorenza, Patrick
Alessandrino, Mario S.
Carbone, Beatrice
Russo, Alfio
Roccaforte, Fabrizio
Giannazzo, Filippo
author_facet Fiorenza, Patrick
Alessandrino, Mario S.
Carbone, Beatrice
Russo, Alfio
Roccaforte, Fabrizio
Giannazzo, Filippo
author_sort Fiorenza, Patrick
collection PubMed
description In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated.
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spelling pubmed-82342762021-06-27 High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy Fiorenza, Patrick Alessandrino, Mario S. Carbone, Beatrice Russo, Alfio Roccaforte, Fabrizio Giannazzo, Filippo Nanomaterials (Basel) Article In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated. MDPI 2021-06-21 /pmc/articles/PMC8234276/ /pubmed/34205790 http://dx.doi.org/10.3390/nano11061626 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fiorenza, Patrick
Alessandrino, Mario S.
Carbone, Beatrice
Russo, Alfio
Roccaforte, Fabrizio
Giannazzo, Filippo
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
title High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
title_full High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
title_fullStr High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
title_full_unstemmed High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
title_short High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
title_sort high-resolution two-dimensional imaging of the 4h-sic mosfet channel by scanning capacitance microscopy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234276/
https://www.ncbi.nlm.nih.gov/pubmed/34205790
http://dx.doi.org/10.3390/nano11061626
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