Random Telegraph Noise in 3D NAND Flash Memories

In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon chann...

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Detalles Bibliográficos
Autores principales: Spinelli, Alessandro S., Malavena, Gerardo, Lacaita, Andrea L., Monzio Compagnoni, Christian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234306/
https://www.ncbi.nlm.nih.gov/pubmed/34208725
http://dx.doi.org/10.3390/mi12060703

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234306/
https://www.ncbi.nlm.nih.gov/pubmed/34208725
http://dx.doi.org/10.3390/mi12060703

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