Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold volta...

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Detalles Bibliográficos
Autores principales: Dub, Maksym, Sai, Pavlo, Sakowicz, Maciej, Janicki, Lukasz, But, Dmytro B., Prystawko, Paweł, Cywiński, Grzegorz, Knap, Wojciech, Rumyantsev, Sergey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234809/
https://www.ncbi.nlm.nih.gov/pubmed/34205287
http://dx.doi.org/10.3390/mi12060721

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234809/
https://www.ncbi.nlm.nih.gov/pubmed/34205287
http://dx.doi.org/10.3390/mi12060721

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