A Schottky-Type Metal-Semiconductor-Metal Al(0.24)Ga(0.76)N UV Sensor Prepared by Using Selective Annealing

Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved the ohmic behavior and performance compared to a non-annealed sensor. Its dark curr...

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Detalles Bibliográficos
Autores principales: Park, Byeong-Jun, Seol, Jeong-Hoon, Hahm, Sung-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235189/
https://www.ncbi.nlm.nih.gov/pubmed/34205761
http://dx.doi.org/10.3390/s21124243

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235189/
https://www.ncbi.nlm.nih.gov/pubmed/34205761
http://dx.doi.org/10.3390/s21124243

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