Cargando…
Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al(2)O(3) on an n-Type Silicon Substrate
In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum oxide (Al(2)O(3)) on an n-type silicon (n-Si) substrate based on the effect of post-deposition heat treatment, which was speckled according to ambient temperature and treatment applied time. Based on t...
Autores principales: | Bhattacharjee, Atish, Kim, Tae-Woo |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235433/ https://www.ncbi.nlm.nih.gov/pubmed/34208573 http://dx.doi.org/10.3390/ma14123328 |
Ejemplares similares
-
The Effect of Post Deposition Treatment on Properties of ALD Al-Doped ZnO Films
por: Petrova, Dimitrina, et al.
Publicado: (2023) -
ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices
por: Dimitrov, Dimitre Z., et al.
Publicado: (2021) -
Processing of n+/p−/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates
por: Härkönen, J, et al.
Publicado: (2016) -
Monocyte Differentiation on Atomic Layer-Deposited (ALD) Hydroxyapatite Coating on Titanium Substrate
por: Kylmäoja, Elina, et al.
Publicado: (2023) -
Influence of Conditioning Temperature on Defects in the Double Al(2)O(3)/ZnO Layer Deposited by the ALD Method
por: Gawlińska-Nęcek, Katarzyna, et al.
Publicado: (2021)