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Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al(2)O(3) on an n-Type Silicon Substrate

In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum oxide (Al(2)O(3)) on an n-type silicon (n-Si) substrate based on the effect of post-deposition heat treatment, which was speckled according to ambient temperature and treatment applied time. Based on t...

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Detalles Bibliográficos
Autores principales: Bhattacharjee, Atish, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235433/
https://www.ncbi.nlm.nih.gov/pubmed/34208573
http://dx.doi.org/10.3390/ma14123328

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