On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give...

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Detalles Bibliográficos
Autores principales: Zagni, Nicolò, Chini, Alessandro, Puglisi, Francesco Maria, Pavan, Paolo, Verzellesi, Giovanni
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235448/
https://www.ncbi.nlm.nih.gov/pubmed/34208780
http://dx.doi.org/10.3390/mi12060709

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235448/
https://www.ncbi.nlm.nih.gov/pubmed/34208780
http://dx.doi.org/10.3390/mi12060709

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