Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabric...

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Detalles Bibliográficos
Autores principales: Cho, Seong-Kun, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235453/
https://www.ncbi.nlm.nih.gov/pubmed/34205380
http://dx.doi.org/10.3390/s21124213

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235453/
https://www.ncbi.nlm.nih.gov/pubmed/34205380
http://dx.doi.org/10.3390/s21124213

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