Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS(2) Transistors

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS(2)) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS...

Descripción completa

Detalles Bibliográficos
Autores principales: Gao, Qingguo, Zhang, Chongfu, Liu, Ping, Hu, Yunfeng, Yang, Kaiqiang, Yi, Zichuan, Liu, Liming, Pan, Xinjian, Zhang, Zhi, Yang, Jianjun, Chi, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235638/
https://www.ncbi.nlm.nih.gov/pubmed/34204492
http://dx.doi.org/10.3390/nano11061594

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235638/
https://www.ncbi.nlm.nih.gov/pubmed/34204492
http://dx.doi.org/10.3390/nano11061594

Ejemplares similares