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Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS(2) Transistors

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS(2)) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS...

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Detalles Bibliográficos
Autores principales:	Gao, Qingguo, Zhang, Chongfu, Liu, Ping, Hu, Yunfeng, Yang, Kaiqiang, Yi, Zichuan, Liu, Liming, Pan, Xinjian, Zhang, Zhi, Yang, Jianjun, Chi, Feng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8235638/ https://www.ncbi.nlm.nih.gov/pubmed/34204492 http://dx.doi.org/10.3390/nano11061594

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