Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapti...

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Detalles Bibliográficos
Autores principales: Chao, Yi-Jie, Yang, Kai-Wei, Su, Chi, Lin, Chrong-Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8254684/
https://www.ncbi.nlm.nih.gov/pubmed/34216286
http://dx.doi.org/10.1186/s11671-021-03570-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8254684/
https://www.ncbi.nlm.nih.gov/pubmed/34216286
http://dx.doi.org/10.1186/s11671-021-03570-7

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