Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapti...

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Detalles Bibliográficos
Autores principales: Chao, Yi-Jie, Yang, Kai-Wei, Su, Chi, Lin, Chrong-Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8254684/
https://www.ncbi.nlm.nih.gov/pubmed/34216286
http://dx.doi.org/10.1186/s11671-021-03570-7
Descripción
Sumario:This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapting the novel PID detectors, the maximum charging levels of the detectors have been enhanced.

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