An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of r...

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Detalles Bibliográficos
Autores principales: Kao, Yun-Feng, Shih, Jiaw-Ren, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8257814/
https://www.ncbi.nlm.nih.gov/pubmed/34224012
http://dx.doi.org/10.1186/s11671-021-03569-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8257814/
https://www.ncbi.nlm.nih.gov/pubmed/34224012
http://dx.doi.org/10.1186/s11671-021-03569-0

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