An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of r...

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Autores principales: Kao, Yun-Feng, Shih, Jiaw-Ren, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8257814/
https://www.ncbi.nlm.nih.gov/pubmed/34224012
http://dx.doi.org/10.1186/s11671-021-03569-0
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author Kao, Yun-Feng
Shih, Jiaw-Ren
Lin, Chrong Jung
King, Ya-Chin
author_facet Kao, Yun-Feng
Shih, Jiaw-Ren
Lin, Chrong Jung
King, Ya-Chin
author_sort Kao, Yun-Feng
collection PubMed
description As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a recovery treatment is demonstrated to restore the cyclability of RRAM. An early detection circuit for vulnerable cells in an array is also proposed for further improving the overall endurance of an RRAM array. Lifetime of RRAM can be extended to over 10 k cycles without fail bits in an array.
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spelling pubmed-82578142021-07-20 An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array Kao, Yun-Feng Shih, Jiaw-Ren Lin, Chrong Jung King, Ya-Chin Nanoscale Res Lett Nano Express As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a recovery treatment is demonstrated to restore the cyclability of RRAM. An early detection circuit for vulnerable cells in an array is also proposed for further improving the overall endurance of an RRAM array. Lifetime of RRAM can be extended to over 10 k cycles without fail bits in an array. Springer US 2021-07-05 /pmc/articles/PMC8257814/ /pubmed/34224012 http://dx.doi.org/10.1186/s11671-021-03569-0 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Kao, Yun-Feng
Shih, Jiaw-Ren
Lin, Chrong Jung
King, Ya-Chin
An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
title An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
title_full An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
title_fullStr An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
title_full_unstemmed An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
title_short An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
title_sort early detection circuit for endurance enhancement of backfilled contact resistive random access memory array
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8257814/
https://www.ncbi.nlm.nih.gov/pubmed/34224012
http://dx.doi.org/10.1186/s11671-021-03569-0
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