Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb(2)Te(3)

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb(2)Te(3), is proposed. Importantly, i...

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Detalles Bibliográficos
Autores principales: Wang, Xue‐Peng, Li, Xian‐Bin, Chen, Nian‐Ke, Chen, Bin, Rao, Feng, Zhang, Shengbai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8261487/
https://www.ncbi.nlm.nih.gov/pubmed/34258152
http://dx.doi.org/10.1002/advs.202004185

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8261487/
https://www.ncbi.nlm.nih.gov/pubmed/34258152
http://dx.doi.org/10.1002/advs.202004185

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