4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N(+) polysilicon split gate to the P...

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Detalles Bibliográficos
Autores principales: Na, Jaeyeop, Cheon, Jinhee, Kim, Kwangsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269547/
https://www.ncbi.nlm.nih.gov/pubmed/34202093
http://dx.doi.org/10.3390/ma14133554

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269547/
https://www.ncbi.nlm.nih.gov/pubmed/34202093
http://dx.doi.org/10.3390/ma14133554

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