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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N(+) polysilicon split gate to the P...
Autores principales: | Na, Jaeyeop, Cheon, Jinhee, Kim, Kwangsoo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269547/ https://www.ncbi.nlm.nih.gov/pubmed/34202093 http://dx.doi.org/10.3390/ma14133554 |
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