Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al(x)Ga(1-x)As layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve...

Descripción completa

Detalles Bibliográficos
Autores principales: Anbinderis, Maksimas, Ašmontas, Steponas, Čerškus, Aurimas, Gradauskas, Jonas, Lučun, Andžej, Šilėnas, Aldis, Sužiedėlis, Algirdas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271366/
https://www.ncbi.nlm.nih.gov/pubmed/34209095
http://dx.doi.org/10.3390/s21134487

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271366/
https://www.ncbi.nlm.nih.gov/pubmed/34209095
http://dx.doi.org/10.3390/s21134487

Ejemplares similares