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Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al(x)Ga(1-x)As layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271366/ https://www.ncbi.nlm.nih.gov/pubmed/34209095 http://dx.doi.org/10.3390/s21134487 |