Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resist...

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Detalles Bibliográficos
Autores principales: Jeon, Hyeong-Un, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271403/
https://www.ncbi.nlm.nih.gov/pubmed/34203521
http://dx.doi.org/10.3390/s21134435

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271403/
https://www.ncbi.nlm.nih.gov/pubmed/34203521
http://dx.doi.org/10.3390/s21134435

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